METALORGANIC MOLECULAR-BEAM EPITAXY OF ZN1-XCDXSYSE1-Y QUATERNARY ALLOYS ON GAAS SUBSTRATE

被引：8

作者：

ICHINO, K

WU, YH

KAWAKAMI, Y

FUJITA, S

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9B期

关键词：

ZNCDSSE ALLOYS; RHEED OSCILLATION; LAYER-BY-LAYER GROWTH; MOMBE;

D O I：

10.1143/JJAP.30.L1624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The successful growth of Zn1-xCdxSySe1-y (ZnCdSSe) quaternary alloys by metalorganic molecular beam epitaxy (MOMBE) is reported. Layer-by-layer growth was confirmed for the first time by monitoring the intensity oscillation of a specular beam in a reflection high-energy diffraction (RHEED) pattern. ZnCdSSe layers coherently grown on GaAs exhibited good crystallographic and optical properties.

引用

收藏

页码：L1624 / L1626

页数：3

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