KINETIC-THEORY OF BOMBARDMENT INDUCED INTERFACE EVOLUTION

[1] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[2] EVAPORATED FILM PROFILES OVER STEPS IN SUBSTRATES [J]. THIN SOLID FILMS, 1970, 6 (02) : 113 - &

[3] PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 393 - 396

[4] THE FORMATION AND EVOLUTION OF EDGES ON SPUTTER-ERODED SURFACES [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 51 (05): : 745 - 763

[5] CHAPMAN B, 1981, GLOW DISCHARGE PROCE

[6] CHIN D, 1983, IEEE T ELECTRON DEV, V30, P993, DOI 10.1109/T-ED.1983.21252

[7] EFFECT OF POTENTIAL-FIELD ON ION DEFLECTION AND SHAPE EVOLUTION OF TRENCHES DURING PLASMA-ASSISTED ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : 941 - 949

[8] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[9] LINE-PROFILE RESIST DEVELOPMENT SIMULATION TECHNIQUES [J]. POLYMER ENGINEERING AND SCIENCE, 1977, 17 (06) : 381 - 384

[10] EXPERIMENTAL TESTS OF THE STEADY-STATE MODEL FOR OXYGEN REACTIVE ION ETCHING OF SILICON-CONTAINING POLYMERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (05): : 2938 - 2944

[1] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[2] EVAPORATED FILM PROFILES OVER STEPS IN SUBSTRATES [J]. THIN SOLID FILMS, 1970, 6 (02) : 113 - &

[3] PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 393 - 396

[4] THE FORMATION AND EVOLUTION OF EDGES ON SPUTTER-ERODED SURFACES [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 51 (05): : 745 - 763

[5] CHAPMAN B, 1981, GLOW DISCHARGE PROCE

[6] CHIN D, 1983, IEEE T ELECTRON DEV, V30, P993, DOI 10.1109/T-ED.1983.21252

[7] EFFECT OF POTENTIAL-FIELD ON ION DEFLECTION AND SHAPE EVOLUTION OF TRENCHES DURING PLASMA-ASSISTED ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : 941 - 949

[8] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[9] LINE-PROFILE RESIST DEVELOPMENT SIMULATION TECHNIQUES [J]. POLYMER ENGINEERING AND SCIENCE, 1977, 17 (06) : 381 - 384

[10] EXPERIMENTAL TESTS OF THE STEADY-STATE MODEL FOR OXYGEN REACTIVE ION ETCHING OF SILICON-CONTAINING POLYMERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (05): : 2938 - 2944