ATOMIC-SIZE EFFECTS ON THE GROWTH OF SRF2 AND (CA,SR)F2 ON SI(111)

被引：8

作者：

DENLINGER, JD ^{[1
]}

OLMSTEAD, MA ^{[1
]}

ROTENBERG, E ^{[1
]}

PATEL, JR ^{[1
]}

FONTES, E ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.43.7335

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strain-induced lattice relaxation during overlayer growth is investigated by in situ monitoring of SrF2 and Ca(x)Sr(1-x)F2 growth on Si(111) with x-ray standing-wave fluorescence and low-energy electron diffraction. Submonolayer films show both intrinsic lateral disorder and variable interface stoichiometry with discommensuration parallel to the surface after completion of the first monolayer. In contrast, local commensuration is observed for Ca-rich alloy films. In the alloy, Sr and Ca occupy different sites in the first monolayer, but have similar average positions in subsequent layers.

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收藏

页码：7335 / 7338

页数：4

相关论文

共 20 条

[1] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J].

ASANO, T ;

ISHIWARA, H .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :517-519

[2] LOCAL-STRUCTURE OF TERNARY SEMICONDUCTING RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF CD1-XMNXTE [J].

BALZAROTTI, A ;

CZYZYK, M ;

KISIEL, A ;

MOTTA, N ;

PODGORNY, M ;

ZIMNALSTARNAWSKA, M .

PHYSICAL REVIEW B, 1984, 30 (04) :2295-2298

[3] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE [J].

BATSTONE, JL ;

PHILLIPS, JM ;

HUNKE, EC .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1394-1397

[4] EFFECT OF DYNAMICAL DIFFRACTION IN X-RAY FLUORESCENCE SCATTERING [J].

BATTERMAN, BW .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A759-&

[5] ANALYSIS OF EPITAXIAL FLUORIDE-SEMICONDUCTOR INTERFACES [J].

GIBSON, JM ;

PHILLIPS, JM .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :828-830

[6] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

HASHIMOTO, S ;

PENG, JL ;

GIBSON, WM ;

SCHOWALTER, LJ ;

FATHAUER, RW .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1071-1073

[7] X-RAY STANDING WAVE ANALYSIS OF BISMUTH IMPLANTED IN SI(110) [J].

HERTEL, N ;

MATERLIK, G ;

ZEGENHAGEN, J .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1985, 58 (03) :199-204

[8] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[9] CRYSTAL STRUCTURE OF STRONTIUM DISILICIDE [J].

JANZON, K ;

SCHAFER, H ;

WEISS, A .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1965, 4 (03) :245-&

[10] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS RANDOM SOLID-SOLUTIONS [J].

MIKKELSEN, JC ;

BOYCE, JB .

PHYSICAL REVIEW B, 1983, 28 (12) :7130-7140