PREPARATION OF COPPER INDIUM SULFIDE THIN-FILMS BY SINGLE-SOURCE OMCVD - MASS-SPECTRAL INVESTIGATION OF DECOMPOSITION PATH OF THE ORGANOMETALLIC SOURCES

被引:17
作者
NOMURA, R
SEKI, Y
KONISHI, K
MATSUDA, H
机构
[1] Department of Applied Chemistry, Faculty of Engineering, Osaka University, Suita, Osaka, 565, Yamada-Oka
关键词
ORGANOINDIUM THIOLATES; COPPER DITHIOCARBAMATES; SINGLE-SOURCE OMCVD; COPPER INDIUM SULFIDE; MASS SPECTRA; FRAGMENTATION; SOLAR CELL; COPPER SULFIDE; INDIUM SULFIDE;
D O I
10.1002/aoc.590060808
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
In order to prepare high-quality CuInS2 thin films vapor phase decomposition patterns of three copper-indium binuclear complexes, Bu2In[S(i-Pr)]Cu(S2CNBu2) (1a) BuIn[(i-Pr)]Cu(S2CNBu2) (1b) and Bu2In[S(i-Pr)]Cu[S2CN(i-Pr)2] (1c) as candidates for source materials were investigated using El MS. The complex 1c showed series of intensive peaks due to the fragmentation of M+. For 1a, only a fragmentation pattern starting from BuIn(S2CNBu2)2 was detectable. This should suggest that la decomposed into BuIn(S2CNBu2), and copper sulfide before vaporization. In addition an ambiguous feature could be observed for lb, viz. two fragmentation paths. Consequently, we judge that 1c is a suitable source complex to prepare CuInS2 thin films via a single-source OMCVD process. Thus chalcopyrite CuInS2 thin films were successfully prepared via single-source OMCVD using 1c as a source complex, with T(substrate) 400-degrees-C, T(source) 80-degrees-C, base pressure 0.7 Torr and carrier (nitrogen) flow rate 0.8 L min-1. Fragmentation of two copper dithiocarbmates, Cu(S2CNBu2)2 and Cu[S2CN(i-Pr)2]2, and two butylindium thiolates, Bu2InS(i-Pr) and BuIn[S(i-Pr)]2, as components of 1 is additionally discussed.
引用
收藏
页码:685 / 691
页数:7
相关论文
共 18 条
[1]   THE VOLATILITIES OF ORGANO-INDIUM COMPOUNDS BY KNUDSEN EFFUSION [J].
BRADLEY, DC ;
FAKTOR, MM ;
FRIGO, DM .
JOURNAL OF CRYSTAL GROWTH, 1988, 89 (2-3) :227-236
[2]   TRIMETHYLGALLIUM .2. REACTIONS WITH HYDROXY- AND SIMILAR COMPOUNDS [J].
COATES, GE .
JOURNAL OF THE CHEMICAL SOCIETY, 1953, (SEP) :2519-2524
[3]   GROWTH AND PROCESS IDENTIFICATION OF CUINS2 ON GAP BY CHEMICAL VAPOR-DEPOSITION [J].
HWANG, HL ;
SUN, CY ;
FANG, CS ;
CHANG, SD ;
CHENG, CH ;
YANG, MH ;
LIN, HH ;
TUWANMU, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :116-124
[4]   CHARACTERIZATION OF RF-SPUTTERED CUINSE2 FILMS [J].
KRISHNASWAMY, SV ;
MANOCHA, AS ;
SZEDON, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :510-511
[5]  
MESSE JM, 1975, B AM PHYS SOC, V20, P696
[6]   PREPARATION AND CHARACTERIZATION OF NORMAL-BUTYLINDIUM AND ISO-BUTYLINDIUM THIOLATE [J].
NOMURA, R ;
INAZAWA, S ;
KANAYA, K ;
MATSUDA, H .
POLYHEDRON, 1989, 8 (06) :763-767
[7]   SULFUR-DOPED INDIUM OXIDE THIN-FILMS AS A NEW TRANSPARENT AND CONDUCTIVE LAYER PREPARED BY OMCVD PROCESS USING BUTYLINDIUM THIOLATE [J].
NOMURA, R ;
KONISHI, K ;
MATSUDA, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (02) :631-632
[8]   OXYGEN-CONTAINING OR SULFUR-CONTAINING ORGANOINDIUM COMPOUNDS FOR PRECURSORS OF INDIUM OXIDE AND SULFIDE THIN-FILMS [J].
NOMURA, R ;
FUJII, S ;
KANAYA, K ;
MATSUDA, H .
POLYHEDRON, 1990, 9 (2-3) :361-366
[9]   PREPARATION OF COPPER-INDIUM-SULFIDE THIN-FILMS BY SOLUTION PYROLYSIS OF ORGANOMETALLIC SOURCES [J].
NOMURA, R ;
KANAYA, K ;
MATSUDA, H .
CHEMISTRY LETTERS, 1988, (11) :1849-1850
[10]   SINGLE-SOURCE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION PROCESS FOR SULFIDE THIN-FILMS - INTRODUCTION OF A NEW ORGANOMETALLIC PRECURSOR BUNIN(SPRI)2 AND PREPARATION OF IN2S3 THIN-FILMS [J].
NOMURA, R ;
KONISHI, K ;
MATSUDA, H .
THIN SOLID FILMS, 1991, 198 (1-2) :339-345