EPR IDENTIFICATION OF THE SINGLE-ACCEPTOR STATE OF INTERSTITIAL CARBON IN SILICON

An EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the acceptor level at Ec-0.10 eV. The core structure of the defect is a 100 C-Si interstitialcy similar to that previously proposed for Ci+. The spin wave function is substantially more diffuse, however. © 1990 The American Physical Society.