THE INFLUENCE OF NH4F ON THE ETCH RATES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION ARSENOSILICATE GLASSES IN BUFFERED OXIDE ETCH

被引：3

作者：

PROKSCHE, H ^{[1
]}

NAGORSEN, G ^{[1
]}

ROSS, D ^{[1
]}

机构：

[1] UNIV MUNICH,DEPT INORGAN CHEM,W-8000 MUNICH,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 12期

关键词：

D O I：

10.1149/1.2221135

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The dependence of the etch rates of low pressure chemical vapor deposition (LPCVD) arsenosilicate glass (AsSG) films with various dopant concentrations as a function of the composition of buffered and unbuffered hydrofluoric acid was examined. The composition of the buffered oxide etch (BOE) was varied from 0-30 weight percent (w/o) ammonium fluoride (NH4F) with 6 w/o hydrofluoric acid (HF), and the concentration of HF from 3-10 w/o HF. In unbuffered hydrofluoric acid the etch rates increase linearly with the HF concentration. In BOE the etch rates run through a maximum. The AsSG films show principally the same etch behavior as undoped films described in a former paper. So we conclude that the same dissolution reaction occurs. A model for the reaction mechanism is proposed.

引用

页码：3611 / 3615

页数：5

共 24 条

[1] LOW-PRESSURE DEPOSITION OF DOPED SIO2 BY PYROLYSIS OF TETRAETHYLORTHOSILICATE (TEOS) .2. ARSENIC DOPED FILMS [J].