PARALLEL HOT-CARRIER-INDUCED DEGRADATION MECHANISMS IN HYDROGEN-PASSIVATED POLYSILICON-ON-INSULATOR LDD P-MOSFETS

被引：9

作者：

BHATTACHARYA, S ^{[1
]}

KOVELAMUDI, R ^{[1
]}

BATRA, S ^{[1
]}

BANERJEE, S ^{[1
]}

NGUYEN, BY ^{[1
]}

TOBIN, P ^{[1
]}

机构：

[1] MOTOROLA INC,APRDI,AUSTIN,TX 78762

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier stressing has been shown to degrade hydrogen-passivated p-channel polysilicon-on-insulator (poly-SOI) MOSFET's by two parallel degradation mechanisms. We observe hot-carrier-induced degradation of hydrogen passivation at grain boundaries through the creation of additional donor-type grain boundary states in the channel, as well as hot-electron trapping in the gate oxide. Due to the presence of both of these degradation mechanisms, p-channel polysilicon LDD MOSFET's exhibit anomalous hot-carrier-induced degradation behavior that has not been observed in bulk p-MOSFET's.

引用

页码：491 / 493

页数：3

共 7 条

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