EFFECTS OF LIGHTLY DOPED DRAIN STRUCTURE WITH OPTIMUM ION DOSE ON P-CHANNEL MOSFETS

[1] REDUCED HOT-ELECTRON EFFECTS IN MOSFETS WITH AN OPTIMIZED LDD STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) : 389 - 391

[2] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[3] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203

[4] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 691 - 699

[5] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74

[6] Koyanagi M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P722

[7] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[8] A TWO-DIMENSIONAL INTEGRATED PROCESS SIMULATOR - SPIRIT-I [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1987, 6 (03) : 439 - 445

[9] HOT-ELECTRON AGING IN P-CHANNEL MOSFETS FOR VLSI CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1896 - 1898

[10] SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 611 - 618

[1] REDUCED HOT-ELECTRON EFFECTS IN MOSFETS WITH AN OPTIMIZED LDD STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) : 389 - 391

[2] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[3] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203

[4] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 691 - 699

[5] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74

[6] Koyanagi M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P722

[7] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[8] A TWO-DIMENSIONAL INTEGRATED PROCESS SIMULATOR - SPIRIT-I [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1987, 6 (03) : 439 - 445

[9] HOT-ELECTRON AGING IN P-CHANNEL MOSFETS FOR VLSI CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1896 - 1898

[10] SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 611 - 618