LASER-ASSISTED LIQUID-FILM ETCHING

被引:2
作者
LIM, P
BROCK, J
TRACHTENBERG, I
机构
[1] Chemical Engineering Department, University of Texas, Austin
关键词
D O I
10.1063/1.109066
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser-assisted liquid film etching (LALFE) is a new technique for maskless patterning of silicon substrates. This technique involves forming a thin liquid film of etchant on a silicon substrate and focusing a laser beam on the portion to be etched. Results are given for direct-writing, orientation dependent LALFE on (100) and (111)n-Si using films of polyvinyl alcohol (PVA) as a wetting agent for hydrofluoric acid on n-Si.
引用
收藏
页码:3345 / 3347
页数:3
相关论文
共 9 条
[1]   ANISOTROPIC LASER ETCHING OF OXIDIZED (100) SILICON [J].
ARNONE, C ;
SCELSI, GB .
APPLIED PHYSICS LETTERS, 1989, 54 (03) :225-227
[2]   LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700
[3]  
Ghandhi S.K, 1995, VLSI FABRICATION PRI
[4]   KINETIC INVESTIGATION OF DEHYDRATION OF POLYVINYL ALCOHOL) AND MODEL COMPOUNDS IN AQUEOUS-SOLUTION [J].
GORLICH, W ;
SCHNABEL, W .
EUROPEAN POLYMER JOURNAL, 1972, 8 (09) :1087-&
[5]  
Podlesnik D. V., 1983, Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium, P57
[6]   DEEP-ULTRAVIOLET INDUCED WET ETCHING OF GAAS [J].
PODLESNIK, DV ;
GILGEN, HH ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1984, 45 (05) :563-565
[7]  
PODLESNIK DV, 1983, APPL PHYS LETT, V42, P530
[8]   THE LASER-CONTROLLED MICROMETER-SCALE PHOTOELECTROCHEMICAL ETCHING OF III-V SEMICONDUCTORS [J].
RUBERTO, MN ;
ZHANG, X ;
SCARMOZZINO, R ;
WILLNER, AE ;
PODLESNIK, DV ;
OSGOOD, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (04) :1174-1185
[9]   RAPID DIRECT WRITING OF HIGH-ASPECT-RATIO TRENCHES IN SILICON [J].
TREYZ, GV ;
BEACH, R ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1987, 50 (08) :475-477