NUMERICAL STUDY OF EFFECT OF FABRICATION DAMAGE ON CARRIER DYNAMICS IN MQW NARROW WIRES

To clarify the dependence of the exciton absorption recovery time on wire width in multiple quantum well (MQW) narrow wires, we performed numerical calculations using a simple model with damage effects. The drastic reduction in recovery time for heavily damaged wires is attributed to the formation of a ''dead layer'', in which carriers vanish almost immediately, near the sidewalls. For lighter damage, the recovery time curve shifts downward with increasing damage as if surface recombination velocity had been increased. The carrier density profile for lighter damage indicates that the optical nonlinearity is not degraded for light damage although the recovery time is reduced.