TRANSPORT PROPERTIES OF ELECTRONS IN ENERGY-BAND TAILS

[21] FIELD-DEPENDENT CARRIER TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (05): : 1151 - 1168

[22] IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J]. PHYSICAL REVIEW, 1960, 120 (03): : 745 - 755

[23] BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1965, 139 (1A): : A343 - &

[24] METAL-INSULATOR TRANSITION IN EXTRINSIC SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1972, 21 (94) : 785 - 823

[25] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &

[26] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .10. MOBILITY AND PERCOLATION EDGES [J]. PHILOSOPHICAL MAGAZINE, 1974, 29 (03): : 613 - 639

[27] MOTT NF, 1971, ELECTRONIC PROCESSES

[28] Pollak M., 1972, Journal of Non-Crystalline Solids, V11, P1, DOI 10.1016/0022-3093(72)90304-3

[29] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &

[30] POLLAK M, UNPUBLISHED

[21] FIELD-DEPENDENT CARRIER TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (05): : 1151 - 1168

[22] IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J]. PHYSICAL REVIEW, 1960, 120 (03): : 745 - 755

[23] BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1965, 139 (1A): : A343 - &

[24] METAL-INSULATOR TRANSITION IN EXTRINSIC SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1972, 21 (94) : 785 - 823

[25] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &

[26] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .10. MOBILITY AND PERCOLATION EDGES [J]. PHILOSOPHICAL MAGAZINE, 1974, 29 (03): : 613 - 639

[27] MOTT NF, 1971, ELECTRONIC PROCESSES

[28] Pollak M., 1972, Journal of Non-Crystalline Solids, V11, P1, DOI 10.1016/0022-3093(72)90304-3

[29] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &

[30] POLLAK M, UNPUBLISHED