PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF INSITU DOPED EPITAXIAL SILICON AT LOW-TEMPERATURES .2. BORON DOPING

被引：21

作者：

COMFORT, JH

REIF, R

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1067 / 1073

页数：7

共 25 条

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[3] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF INSITU DOPED EPITAXIAL SILICON AT LOW-TEMPERATURES .1. ARSENIC DOPING
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[4] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL SILICON DEPOSITION .1. PROCESS CONSIDERATIONS
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[5] PLASMA-ENHANCED DEPOSITION OF HIGH-QUALITY EPITAXIAL SILICON AT LOW-TEMPERATURES
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2016 - 2018
[6] COMFORT JH, IN PRESS J ELECTROCH
[7] COWER ME, 1972, J ELECTROCHEM SOC, V119, P1565
[8] LOW-TEMPERATURE SILICON EPITAXY USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 346 - 348
[9] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765
[10] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

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