DEPOSITION OF A-SI-H BY HIGH-TEMPERATURE THERMAL-DECOMPOSITION OF SILANE

被引：9

作者：

HORBACH, C

BEYER, W

WAGNER, H

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90108-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：187 / 189

页数：3

共 7 条

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[2]

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[3]

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[5] STUDY ON CATALYTIC CHEMICAL VAPOR-DEPOSITION METHOD TO PREPARE HYDROGENATED AMORPHOUS-SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4396-4402

[6] REINTERPRETATION OF THE SILICON-HYDROGEN STRETCH FREQUENCIES IN AMORPHOUS-SILICON [J].

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BEYER, W .

SOLID STATE COMMUNICATIONS, 1983, 48 (07) :585-587

[7] A-SI-H PRODUCED BY HIGH-TEMPERATURE THERMAL-DECOMPOSITION OF SILANE [J].

WIESMANN, H ;

GHOSH, AK ;

MCMAHON, T ;

STRONGIN, M .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3752-3754

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