HOLE TRAPPING DURING LOW GATE BIAS, HIGH DRAIN BIAS HOT-CARRIER INJECTION IN N-MOSFETS AT 77-K

Injection and trapping of holes in the gate oxide of n-channel MOS transistors during operation at large drain and small gate biases are investigated at liquid-nitrogen temperature. Experimental evidence is given that about three times less trapping of holes occurs in the gate oxide at 77 K as compared to 295 K. We show that this is due to the small hole mobility in SiO2 at low temperatures.