TEMPERATURE-DEPENDENCE OF THE CHANNEL HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS

The generation of fast interface traps due to channel hot-carrier injection in n-channel MOS transistors is investigated as a function of stress temperature. The relative importance of the mechanisms for the generation of fast interface traps by hot electrons and hot holes is shown to be independent of the temperature. Furthermore, it is found that in all cases the generation of fast interface traps is slightly reduced at lower temperatures. The degradation of transistor Id-Vgcharacteristics, on the other hand, is strongly enhanced at lower temperatures. It is demonstrated that this is explained by a previously suggested model on the temperature dependence of the influence of the local narrow potential barrier, induced at the drain junction as a result of degradation, on the reverse-mode current characteristics. It is further shown that only a minor part of the large current reduction at low temperatures can be ascribed to enhanced electron trapping. © 1990 IEEE