AXIALLY CONTROLLED SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：15

作者：

HASEGAWA, S

NAKAMURA, T

KURATA, Y

机构：

[1] Kanazawa University, Kanazawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期

关键词：

POLYCRYSTALLINE SILICON; SOLID-PHASE CRYSTALLIZATION; PREFERENTIAL ORIENTATION; CRYSTALLIZATION PROCESS; GRAIN SIZE;

D O I：

10.1143/JJAP.31.161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallization behavior of a-Si films has been investigated as a function of the annealing temperature T(a) (530-1100-degrees-C) and time (0-72 h) by means of X-ray diffraction, transmission electron microscopy (TEM) and Raman scattering. The a-Si films were deposited by low-pressure chemical vapor deposition (LPCVD) onto poly-Si films with a strong <110> texture prepared by plasma-enhanced CVD (PECVD) [poly-Si(P)], and onto fused quartz substrates [poly-Si(Q)]. Poly-Si(P) films were crystallized maintaining the same strong <110> texture as the PECVD poly-Si substrate, over the entire T(a) range. However, poly-Si(Q) films exhibited a weak <111> texture. The final grain size estimated by TEM for poly-Si(P) films was independent of T(a), but became 7-8 times larger than that for the poly-Si substrate. The crystallization mechanism of poly-Si(P) films was discussed in comparison with that of poly-Si(Q) films.

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页码：161 / 167

页数：7

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