PICOSECOND LASER MELTING AND EVAPORATION OF GAAS-SURFACES

被引：15

作者：

LIU, JM ^{[1
]}

MALVEZZI, AM ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.97059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：622 / 624

页数：3

共 16 条

[1]

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DOWNER, MC ;

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JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (04) :595-599

[3]

GLAZOV VM, 1969, LIQUID SEMICONDUCTOR, pCH4

[4]

HEAVENS OS, 1965, OPTICAL PROPERTIES T, P76

[5]

Liu J., UNPUB

[6] PHENOMENOLOGY OF PICOSECOND HEATING AND EVAPORATION OF SILICON SURFACES COATED WITH SIO2 LAYERS [J].

LIU, JM ;

LOMPRE, LA ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (01) :25-29

[7] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :643-646

[8]

LIU JM, 1983, MAT RES SOC S P, V13, P3

[9]

LIU JM, 1986, MAT RES SOC S P, V51, P225

[10] TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON [J].

LOMPRE, LA ;

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :168-170

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