RAPID THERMAL-PROCESSING TO IMPROVE THE EPITAXY OF (100) SILICON ON (1102) SAPPHIRE

被引：10

作者：

PFEIFFER, L

PHILLIPS, JM

LUTHER, KE

WEST, KW

BATSTONE, JL

STEVIE, FA

MAURITS, JEA

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] UNION CARBIDE CORP,WASHOUGAL,WA 98671

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.98175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：466 / 468

页数：3

共 14 条

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CAREY, K .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :163-165

[2]

[Anonymous], 1985, QUICK REFERENCE MANU

[3]

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[4]

GUPTA A, 1983, SOLID STATE TECHNOL, V26, P104

[5]

GUPTA A, 1983, SOLID STATE TECHNOL, V26, P129

[6] CO-60 RADIATION EFFECTS ON LASER ANNEALED SILICON ON SAPPHIRE [J].

GUPTA, A ;

CHI, YM ;

VALDEZ, JB ;

OLSON, GL ;

HESS, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4080-4082

[7] OPTICAL-ABSORPTION COEFFICIENT OF SILICON AT 1.152-MU AT ELEVATED-TEMPERATURES [J].

JELLISON, GE ;

LOWNDES, DH .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :594-596

[8] USE OF A RAPID ANNEAL TO IMPROVE CAF2-SI (100) EPITAXY [J].

PFEIFFER, L ;

PHILLIPS, JM ;

SMITH, TP ;

AUGUSTYNIAK, WM ;

WEST, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :947-949

[9]

PICRAUX ST, 1978, P ELECTROCHEM SOC, V783, P447

[10]

PONCE FA, 1982, APPL PHYS LETT, V41, P37

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