STUDY OF DEFECTS IN LEC-GROWN UNDOPED SI-GAAS BY THERMALLY STIMULATED CURRENT SPECTROSCOPY

被引：50

作者：

FANG, ZQ

LEI, S

SCHLESINGER, TE

MILNES, AG

机构：

[1] Carnegie Mellon University, Pittsburgh

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1016/0921-5107(90)90104-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermally stimulated current spectroscopy (TSC) reveals at least six traps in LEC semi-insulating GaAs. The relative concentrations of the traps are related to the native defect complexes expected from growth stoichiometry and subsequent annealing conditions. Variations of the sample conditions prior to the TSC scan are found to provide some evidence as to nature of the traps observed and also appear to cause photo-induced defect reactions. © 1990.

引用

页码：397 / 408

页数：12

共 36 条

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