ANNEALING BEHAVIOR OF UNDOPED BULK GAAS

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] NATIVE DEFECTS IN GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : R65 - R91

[3] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2183 - 2186

[4] VACANCY INTERACTIONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 591 - 594

[5] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 729 - +

[6] EVIDENCE FOR EL6(EC-0.35EV) ACTING AS A DOMINANT RECOMBINATION CENTER IN N-TYPE HORIZONTAL BRIDGMAN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5047 - 5050

[7] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[8] HIRAMOTO T, 1988, IN PRESS SEMIINSULAT

[9] THERMAL-CONVERSION OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4861 - 4869

[10] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 892 - 894

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] NATIVE DEFECTS IN GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : R65 - R91

[3] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2183 - 2186

[4] VACANCY INTERACTIONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 591 - 594

[5] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 729 - +

[6] EVIDENCE FOR EL6(EC-0.35EV) ACTING AS A DOMINANT RECOMBINATION CENTER IN N-TYPE HORIZONTAL BRIDGMAN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5047 - 5050

[7] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[8] HIRAMOTO T, 1988, IN PRESS SEMIINSULAT

[9] THERMAL-CONVERSION OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4861 - 4869

[10] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 892 - 894