SOME PROPERTIES OF SILICA FILM MADE BY RF GLOW DISCHARGE SPUTTERING

被引:13
作者
KOZUMA, T
KOBAYASHI, T
HAMAGUCHI, C
NAKAI, J
FUJIOKA, T
MATSUZAWA, A
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10.1143/JJAP.9.983
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O59 [应用物理学];
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页码:983 / +
页数:1
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共 30 条
[1]   DIELECTRIC PROPERTIES OF FILMS FORMED BY VACUUM EVAPORATION OF SILICON MONOXIDE [J].
ANASTASIO, TA .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) :2606-+
[2]   SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J].
ANDERSON, GS ;
MAYER, WN ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2991-&
[3]   DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J].
DAVIDSE, PD ;
MAISSEL, LI .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :574-&
[4]   EQUIVALENT DC SPUTTERING YIELDS OF INSULATORS [J].
DAVIDSE, PD ;
MAISSEL, LI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (01) :33-&
[5]  
DAVIDSE PD, 1966, INSULATION, V12, P41
[6]  
DAVIDSE PD, 1965, 3 INT VAC C STUTTG
[8]  
EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765
[10]   SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].
FROSCH, CJ ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552