ELECTRON-BEAM IRRADIATION EFFECTS ON SNO2-SI PHOTODIODES

被引：3

作者：

KATO, H

KANDA, T

YASUDA, K

YOSHIDA, A

ARIZUMI, T

机构：

[1] NAGOYA MUNICIPAL IND RES INST,NAGOYA,JAPAN

[2] NAGOYA UNIV,NAGOYA,AICHI 464,JAPAN

[3] UNIV ELETROCOMMUN,DEPT COMMUN ENGN,TOKYO 182,JAPAN

[4] GOVT IND RES INST,NAGOYA,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：769 / 774

页数：6

共 14 条

[1] SILICON SURFACE-BARRIER PHOTOCELLS [J].

AHLSTROM, E ;

GARTNER, WW .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2602-+

[2] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J].

ANDERSON, RL .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :691-693

[3]

ARIZUMI T, 1976, IRANIAN J SCI TECHNO, V4, P95

[4]

BILLINGTON DS, 1961, RADIAT DAMAGE SOLIDS, P314

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6] SNO2-SEMI-CONDUCTOR HETEROJUNCTION - ELECTRICAL PROPERTIES OF A PARTICULAR MOS STRUCTURE [J].

FILLARD, JP ;

MANIFACIER, JC .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (08) :1012-+

[7] ELECTRICAL AND OPTICAL PROPERTIES OF SNO2-SI HETEROJUNCTIONS [J].

KAJIYAMA, K ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (07) :905-&

[8] SNO2-SI PHOTOSENSITIVE DIODES [J].

KATO, H ;

FUJIMOTO, J ;

KANDA, T ;

YOSHIDA, A ;

ARIZUMI, T .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01) :255-261

[9] NEW INTEGRATED TRANSDUCER FOR COLOR DISTINCTION [J].

KATO, H ;

MORINAGA, S ;

YOSHIDA, A ;

ARIZUMI, T .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1976, 9 (12) :1070-1072

[10] SIMPLE FABRICATION METHOD OF SNO2-SI SOLAR-CELL [J].

KATO, H ;

YOSHIDA, A ;

ARIZUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) :1819-1820

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