EFFECT OF HYDROGEN IMPLANTATION ON SHALLOW AND DEEP LEVELS IN GAAS GROWTH BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

BOSACCHI, A ^{[1
]}

FRANCHI, S ^{[1
]}

GOMBIA, E ^{[1
]}

MOSCA, R ^{[1
]}

VANZETTI, L ^{[1
]}

ALLEGRI, P ^{[1
]}

AVANZINI, V ^{[1
]}

CAPIZZI, M ^{[1
]}

COLUZZA, C ^{[1
]}

机构：

[1] UNIV LA SAPIENZA,DEPT PHYS,I-00100 ROME,ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1103 / 1105

页数：3

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