A STUDY OF THE TEMPERATURE SENSITIVITY OF GAAS-(AL,GA)AS MULTIPLE-QUANTUM-WELL GRINSCH LASERS

被引：8

作者：

DION, M ^{[1
]}

LI, ZM ^{[1
]}

ROSS, D ^{[1
]}

CHATENOUD, F ^{[1
]}

WILLIAMS, RL ^{[1
]}

DICK, S ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,SOLID STATE EXPTL GRP,LONDON SW7 2BZ,ENGLAND

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 02期

关键词：

D O I：

10.1109/2944.401201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the temperature sensitivity, T-0, of GaAs-(Al,Ga)As, GRINSCH, multiple quantum-well (MQW) lasers with different numbers of quantum wells ranging from one to ten. Our data suggests that there is an optimum number of wells, namely five, where T-0 is highest, Using a temperature-dependent model based on drift-diffusion equations, we have systematically analyzed the temperature sensitivity of a MQW GaAs-(Al,Ga)As laser, The T-0 versus well-number behavior observed experimentally is verified, and the important temperature-dependent factors are identified.

引用

页码：230 / 233

页数：4

共 9 条

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