A MODEL FOR THE DETERMINATION OF THE DEFECT CONCENTRATIONS IN III-V-COMPOUNDS - THE CASE OF GASB

[1] ALFRED WP, 1962, COMPOUND SEMICONDUCT, V1

[2] PHOTOLUMINESCENCE STUDIES ON GAXIN1-XSB ALLOYS [J]. JOURNAL OF LUMINESCENCE, 1976, 11 (5-6) : 339 - 347

[3] Allegre J., 1970, Crystal Lattice Defects, V1, P343

[4] ALLEGRE J, 1970, THESIS MONTPELLIER F

[5] ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) : 41 - &

[6] BENOITAL.C, 1972, PHYS REV B, V5, P4900, DOI 10.1103/PhysRevB.5.4900

[7] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P426

[8] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991

[9] RESIDUAL ACCEPTORS IN NATURAL GASB AND GAXIN1-XSB - THEIR CONTRIBUTION TO TRANSPORT BETWEEN 4.7 AND 300 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2642 - 2646

[10] DOLNECAMPOS M, 1968, PHYS STATUS SOLIDI, V35, P635

[1] ALFRED WP, 1962, COMPOUND SEMICONDUCT, V1

[2] PHOTOLUMINESCENCE STUDIES ON GAXIN1-XSB ALLOYS [J]. JOURNAL OF LUMINESCENCE, 1976, 11 (5-6) : 339 - 347

[3] Allegre J., 1970, Crystal Lattice Defects, V1, P343

[4] ALLEGRE J, 1970, THESIS MONTPELLIER F

[5] ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) : 41 - &

[6] BENOITAL.C, 1972, PHYS REV B, V5, P4900, DOI 10.1103/PhysRevB.5.4900

[7] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P426

[8] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991

[9] RESIDUAL ACCEPTORS IN NATURAL GASB AND GAXIN1-XSB - THEIR CONTRIBUTION TO TRANSPORT BETWEEN 4.7 AND 300 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2642 - 2646

[10] DOLNECAMPOS M, 1968, PHYS STATUS SOLIDI, V35, P635