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A MODEL FOR THE DETERMINATION OF THE DEFECT CONCENTRATIONS IN III-V-COMPOUNDS - THE CASE OF GASB
被引:30
作者
:
EDELIN, G
论文数:
0
引用数:
0
h-index:
0
EDELIN, G
MATHIOT, D
论文数:
0
引用数:
0
h-index:
0
MATHIOT, D
机构
:
来源
:
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
|
1980年
/ 42卷
/ 01期
关键词
:
D O I
:
10.1080/01418638008225641
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:95 / 110
页数:16
相关论文
共 37 条
[31]
GROWTH OF P-TYPE GALLIUM ANTIMONIDE SINGLE-CRYSTALS BY A TEMPERATURE-GRADIENT TRANSPORT TECHNIQUE
RADO, WG
论文数:
0
引用数:
0
h-index:
0
RADO, WG
CRAWLEY, RL
论文数:
0
引用数:
0
h-index:
0
CRAWLEY, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(03)
: 1316
-
&
[32]
GASB PREPARED FROM NONSTOICHIOMETRIC MELTS
REID, FJ
论文数:
0
引用数:
0
h-index:
0
REID, FJ
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
BAXTER, RD
MILLER, SE
论文数:
0
引用数:
0
h-index:
0
MILLER, SE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
: 713
-
&
[33]
STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR
SHOCKLEY, W
论文数:
0
引用数:
0
h-index:
0
SHOCKLEY, W
LAST, JT
论文数:
0
引用数:
0
h-index:
0
LAST, JT
[J].
PHYSICAL REVIEW,
1957,
107
(02):
: 392
-
396
[34]
GROWTH PROPERTIES OF GASB - STRUCTURE OF RESIDUAL ACCEPTOR CENTRES
VANDERME.YJ
论文数:
0
引用数:
0
h-index:
0
VANDERME.YJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(01)
: 25
-
&
[35]
PROPERTIES OF RESIDUAL ACCEPTORS IN GASB FROM REACTIONS WITH LI
VANMAAREN, MH
论文数:
0
引用数:
0
h-index:
0
VANMAAREN, MH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(02)
: 472
-
+
[36]
SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS
VANVECHTEN, JA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
VANVECHTEN, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: 423
-
429
[37]
WOELK C, 1974, J CRYST GROWTH, V27, P177, DOI 10.1016/S0022-0248(74)80062-X
←
1
2
3
4
→
共 37 条
[31]
GROWTH OF P-TYPE GALLIUM ANTIMONIDE SINGLE-CRYSTALS BY A TEMPERATURE-GRADIENT TRANSPORT TECHNIQUE
RADO, WG
论文数:
0
引用数:
0
h-index:
0
RADO, WG
CRAWLEY, RL
论文数:
0
引用数:
0
h-index:
0
CRAWLEY, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(03)
: 1316
-
&
[32]
GASB PREPARED FROM NONSTOICHIOMETRIC MELTS
REID, FJ
论文数:
0
引用数:
0
h-index:
0
REID, FJ
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
BAXTER, RD
MILLER, SE
论文数:
0
引用数:
0
h-index:
0
MILLER, SE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
: 713
-
&
[33]
STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR
SHOCKLEY, W
论文数:
0
引用数:
0
h-index:
0
SHOCKLEY, W
LAST, JT
论文数:
0
引用数:
0
h-index:
0
LAST, JT
[J].
PHYSICAL REVIEW,
1957,
107
(02):
: 392
-
396
[34]
GROWTH PROPERTIES OF GASB - STRUCTURE OF RESIDUAL ACCEPTOR CENTRES
VANDERME.YJ
论文数:
0
引用数:
0
h-index:
0
VANDERME.YJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(01)
: 25
-
&
[35]
PROPERTIES OF RESIDUAL ACCEPTORS IN GASB FROM REACTIONS WITH LI
VANMAAREN, MH
论文数:
0
引用数:
0
h-index:
0
VANMAAREN, MH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(02)
: 472
-
+
[36]
SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS
VANVECHTEN, JA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
VANVECHTEN, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: 423
-
429
[37]
WOELK C, 1974, J CRYST GROWTH, V27, P177, DOI 10.1016/S0022-0248(74)80062-X
←
1
2
3
4
→