AU-CU ALLOY AND AG-CU ALLOY-SILICON SCHOTTKY BARRIERS

被引：5

作者：

ARIZUMI, T

HIROSE, M

ALTAF, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 11期

关键词：

D O I：

10.1143/JJAP.8.1310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1310 / +

页数：1

共 13 条

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[3] AU-AG ALLOY-SILICON SCHOTTKY BARRIERS [J].

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[4]

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[7] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

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[8] CORRELATION OF METAL-SEMICONDUCTOR BARRIER HEIGHT AND METAL WORK FUNCTION - EFFECTS OF SURFACE STATES [J].

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[9]

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[10]

Mead C. A., 1963, J APPL PHYS, V34, P3061

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