共 19 条
[4]
MATERIAL CHARACTERISTICS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION HG1-XCDXTE/GAAS/SI
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (02)
:1045-1048
[5]
MOCVD HG1-XCDXTE/GAAS FOR IR DETECTORS
[J].
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1990, 5
:S221-S224
[6]
INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE
[J].
JOURNAL OF APPLIED PHYSICS,
1979, 50 (06)
:4356-4361
[7]
GIESS J, 1987, MATER RES SOC S P, V90, P389
[9]
A STUDY OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF CDXHG1-XTE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (INTERDIFFUSED MULTILAYER PROCESS)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (02)
:285-290
[10]
LASER-INDUCED SELECTED AREA EPITAXY OF CDTE AND HGTE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (02)
:1059-1066