STUDY OF MICROINHOMOGENEITIES IN MIDWAVE INFRARED MERCURY CADMIUM TELLURIDE GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION-INTERDIFFUSED MULTILAYER PROCESS ONTO GAAS AND GAAS/SI SUBSTRATES

被引:10
作者
IRVINE, SJC
EDWALL, DD
BUBULAC, LO
GIL, RV
GERTNER, ER
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.585874
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The causes for variations in quantum efficiency (QE) for boron-implanted midwave infrared diodes formed in mercury cadmium telluride on CdTe buffered GaAs/Si substrates have been investigated. Smooth layers have QE > 30% with many of the diodes in the 50%-60% range. Layers having a faceted morphology produce diodes with QE < 30%. The faceted layers have been shown by infrared absorption measurements and secondary ion mass spectrometry depth profiles to possess microinhomogeneities in composition. Carrying out comparative growths on GaAs substrates have shown that these microinhomogeneities are not due to the growth process or fundamentally due to the interdiffused multilayer process used to grow the alloy layers. A study of the origins of the faceting behavior on GaAs/Si substrates, using in situ laser reflectance, has shown that they form from three-dimensional island growth, nucleating on the substrate and growing outwards to dominate the growth mode after 2 000 angstrom of buffer growth.
引用
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页码:1392 / 1398
页数:7
相关论文
共 19 条
[1]   DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE [J].
BUBULAC, LO .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :723-734
[2]   NOVEL VERY SENSITIVE ANALYTICAL TECHNIQUE FOR COMPOSITIONAL ANALYSIS OF HG1-XCDXTE EPILAYERS [J].
BUBULAC, LO ;
VISWANATHAN, CR .
APPLIED PHYSICS LETTERS, 1992, 60 (02) :222-224
[3]   LOW-TEMPERATURE GROWTH OF (CD,HG)TE LAYERS BY MOVPE [J].
DESJONQUERES, F ;
TROMSONCARLI, A ;
CHEUVART, P ;
DRUILHE, R ;
GRATTEPAIN, C ;
KATTY, A ;
MARFAING, Y ;
TRIBOULET, R ;
LORANS, D .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :626-631
[4]   MATERIAL CHARACTERISTICS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION HG1-XCDXTE/GAAS/SI [J].
EDWALL, DD ;
BAJAJ, J ;
GERTNER, ER .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1045-1048
[5]   MOCVD HG1-XCDXTE/GAAS FOR IR DETECTORS [J].
EDWALL, DD ;
CHEN, JS ;
BAJAJ, J ;
GERTNER, ER .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 :S221-S224
[6]   INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].
FINKMAN, E ;
NEMIROVSKY, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361
[7]  
GIESS J, 1987, MATER RES SOC S P, V90, P389
[8]   ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].
HANSEN, GL ;
SCHMIT, JL ;
CASSELMAN, TN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101
[9]   A STUDY OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF CDXHG1-XTE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (INTERDIFFUSED MULTILAYER PROCESS) [J].
IRVINE, SJC ;
GOUGH, JS ;
GIESS, J ;
GIBBS, MJ ;
ROYLE, A ;
TAYLOR, CA ;
BROWN, GT ;
KEIR, AM ;
MULLIN, JB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :285-290
[10]   LASER-INDUCED SELECTED AREA EPITAXY OF CDTE AND HGTE [J].
IRVINE, SJC ;
HILL, H ;
HAILS, JE ;
MULLIN, JB ;
BARNETT, SJ ;
BLACKMORE, GW ;
DOSSER, OD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1059-1066