LOW-TEMPERATURE GROWTH OF (CD,HG)TE LAYERS BY MOVPE

被引：8

作者：

DESJONQUERES, F ^{[1
]}

TROMSONCARLI, A ^{[1
]}

CHEUVART, P ^{[1
]}

DRUILHE, R ^{[1
]}

GRATTEPAIN, C ^{[1
]}

KATTY, A ^{[1
]}

MARFAING, Y ^{[1
]}

TRIBOULET, R ^{[1
]}

LORANS, D ^{[1
]}

机构：

[1] SOC ANONYME TELECOMMUN,F-75624 PARIS,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90531-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MCT layers have been grown for the first time at 250-degrees-C using DATe, DMCd and mercury. First the buffer layer CdTe grown at 365-degrees-C using DIPTe and DMCd is studied with an emphasis on the influence of the substrate orientation. Indeed the surface morphology and the crystalline quality may change dramatically as a function of the substrate orientation. Then the low temperature MOVPE growth of (Cd,Hg)Te is described: different compositions were achieved and the crystalline and electronic properties are presented.

引用

收藏

页码：626 / 631

页数：6

相关论文

共 12 条

[1] SURFACE SCIENCE STUDIES OF SEMICONDUCTOR GROWTH-PROCESSES [J].

BUHAENKO, DS ;

FRANCIS, SM ;

GOULDING, PA ;

PEMBLE, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1688-1693

[2] CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE [J].

FEWSTER, PF ;

WHIFFIN, PAC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4668-4670

[3] LOW-TEMPERATURE GROWTH OF HGTE AND HGCDTE USING METHYLALLYLTELLURIDE [J].

GHANDHI, SK ;

BHAT, IB ;

EHSANI, H ;

NUCCIARONE, D ;

MILLER, G .

APPLIED PHYSICS LETTERS, 1989, 55 (02) :137-139

[4] GROWTH ANISOTROPY AND REACTIONS MECHANISMS IN METAL ORGANICS VAPOR-PHASE EPITAXY OF GAAS [J].

GIBART, P ;

TROMSONCARLI, A ;

MONTEIL, Y ;

RUDRA, A .

JOURNAL DE PHYSIQUE, 1989, 50 (C-5) :529-538

[5]

HAILS JE, 1989, IN PRESS MATER RES S

[6] LOW-TEMPERATURE METALORGANIC GROWTH OF CDTE AND HGTE FILMS USING DITERTIARYBUTYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1669-1671

[7] LOW-TEMPERATURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF CDTE USING A NEW ORGANOTELLURIUM SOURCE [J].

KISKER, DW ;

STEIGERWALD, ML ;

KOMETANI, TY ;

JEFFERS, KS .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1681-1683

[8] METALORGANIC GROWTH OF HGTE AND CDTE AT LOW-TEMPERATURES USING DIALLYLTELLURIDE [J].

KORENSTEIN, R ;

HOKE, WE ;

LEMONIAS, PJ ;

HIGA, KT ;

HARRIS, DC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) :4929-4931

[9] TEMPERATURE-INDEPENDENT UNASSISTED PYROLYTIC MOCVD GROWTH OF CADMIUM TELLURIDE AT 250-DEGREES-C USING 2,5-DIHYDROTELLUROPHENE [J].

LICHTMANN, LS ;

PARSONS, JD ;

CIRLIN, EH .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :217-221

[10] DEVICE QUALITY HG1-XCDXTE MATERIAL BY LOW-TEMPERATURE PRECRACKING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

LU, PY ;

WILLIAMS, LM ;

CHU, SNG ;

ROSS, MH .

APPLIED PHYSICS LETTERS, 1989, 54 (20) :2021-2022