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TEMPERATURE-INDEPENDENT UNASSISTED PYROLYTIC MOCVD GROWTH OF CADMIUM TELLURIDE AT 250-DEGREES-C USING 2,5-DIHYDROTELLUROPHENE
被引:17
作者
:
LICHTMANN, LS
论文数:
0
引用数:
0
h-index:
0
LICHTMANN, LS
PARSONS, JD
论文数:
0
引用数:
0
h-index:
0
PARSONS, JD
CIRLIN, EH
论文数:
0
引用数:
0
h-index:
0
CIRLIN, EH
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1988年
/ 86卷
/ 1-4期
关键词
:
D O I
:
10.1016/0022-0248(90)90719-2
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:217 / 221
页数:5
相关论文
共 17 条
[1]
TELLURIUM IN ORGANIC-SYNTHESIS .12. SYNTHESIS OF 2,5-DIHYDROTELLUROPHENE - A NEW HETEROCYCLIC-COMPOUNDS
[J].
BERGMAN, J
论文数:
0
引用数:
0
h-index:
0
BERGMAN, J
;
ENGMAN, L
论文数:
0
引用数:
0
h-index:
0
ENGMAN, L
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1981,
103
(10)
:2715
-2718
[2]
CDTE-INSB HETEROSTRUCTURES GROWN BY ORGANOMETALLIC-VAPOR-PHASE EPITAXY - PREPARATION AND ELECTRICAL-PROPERTIES
[J].
BHAT, IB
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
BHAT, IB
;
SUNDARAM, LMG
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
SUNDARAM, LMG
;
TASKAR, NR
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
TASKAR, NR
;
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
BORREGO, JM
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1986,
29
(02)
:257
-260
[3]
INFLUENCE OF GA-AS-TE INTERFACIAL PHASES ON THE ORIENTATION OF EPITAXIAL CDTE ON GAAS
[J].
FELDMAN, RD
论文数:
0
引用数:
0
h-index:
0
FELDMAN, RD
;
AUSTIN, RF
论文数:
0
引用数:
0
h-index:
0
AUSTIN, RF
;
KISKER, DW
论文数:
0
引用数:
0
h-index:
0
KISKER, DW
;
JEFFERS, KS
论文数:
0
引用数:
0
h-index:
0
JEFFERS, KS
;
BRIDENBAUGH, PM
论文数:
0
引用数:
0
h-index:
0
BRIDENBAUGH, PM
.
APPLIED PHYSICS LETTERS,
1986,
48
(03)
:248
-250
[4]
HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
[J].
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
;
BHAT, I
论文数:
0
引用数:
0
h-index:
0
BHAT, I
.
APPLIED PHYSICS LETTERS,
1984,
44
(08)
:779
-781
[5]
HAGIHARA N, 1968, HDB ORGANOMETALLIC C
[6]
METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE
[J].
HOKE, WE
论文数:
0
引用数:
0
h-index:
0
机构:
Raytheon Co, Research Div,, Lexington, MA, USA, Raytheon Co, Research Div, Lexington, MA, USA
HOKE, WE
;
LEMONIAS, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
Raytheon Co, Research Div,, Lexington, MA, USA, Raytheon Co, Research Div, Lexington, MA, USA
LEMONIAS, PJ
.
APPLIED PHYSICS LETTERS,
1985,
46
(04)
:398
-400
[7]
EPITAXIAL-GROWTH OF CDXHG1-XTE BY PHOTO-MOVPE
[J].
IRVINE, SJC
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
IRVINE, SJC
;
GIESS, J
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
GIESS, J
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
MULLIN, JB
;
BLACKMORE, GW
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
BLACKMORE, GW
;
DOSSER, OD
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
DOSSER, OD
.
MATERIALS LETTERS,
1985,
3
(7-8)
:290
-293
[8]
THE POTENTIAL FOR ABRUPT INTERFACES IN CDXHG1-XTE USING THERMAL AND PHOTO-MOVPE
[J].
IRVINE, SJC
论文数:
0
引用数:
0
h-index:
0
IRVINE, SJC
;
GIESS, J
论文数:
0
引用数:
0
h-index:
0
GIESS, J
;
GOUGH, JS
论文数:
0
引用数:
0
h-index:
0
GOUGH, JS
;
BLACKMORE, GW
论文数:
0
引用数:
0
h-index:
0
BLACKMORE, GW
;
ROYLE, A
论文数:
0
引用数:
0
h-index:
0
ROYLE, A
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
;
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:437
-451
[9]
PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE
[J].
IRVINE, SJC
论文数:
0
引用数:
0
h-index:
0
IRVINE, SJC
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
TUNNICLIFFE, J
论文数:
0
引用数:
0
h-index:
0
TUNNICLIFFE, J
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:188
-193
[10]
ANISOTROPIC PHOTODISSOCIATION OF CADMIUM DIMETHYL
[J].
JONAH, C
论文数:
0
引用数:
0
h-index:
0
JONAH, C
;
CHANDRA, P
论文数:
0
引用数:
0
h-index:
0
CHANDRA, P
;
BERSOHN, R
论文数:
0
引用数:
0
h-index:
0
BERSOHN, R
.
JOURNAL OF CHEMICAL PHYSICS,
1971,
55
(04)
:1903
-&
←
1
2
→
共 17 条
[1]
TELLURIUM IN ORGANIC-SYNTHESIS .12. SYNTHESIS OF 2,5-DIHYDROTELLUROPHENE - A NEW HETEROCYCLIC-COMPOUNDS
[J].
BERGMAN, J
论文数:
0
引用数:
0
h-index:
0
BERGMAN, J
;
ENGMAN, L
论文数:
0
引用数:
0
h-index:
0
ENGMAN, L
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1981,
103
(10)
:2715
-2718
[2]
CDTE-INSB HETEROSTRUCTURES GROWN BY ORGANOMETALLIC-VAPOR-PHASE EPITAXY - PREPARATION AND ELECTRICAL-PROPERTIES
[J].
BHAT, IB
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
BHAT, IB
;
SUNDARAM, LMG
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
SUNDARAM, LMG
;
TASKAR, NR
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
TASKAR, NR
;
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
BORREGO, JM
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Rensselaer Polytechnic Inst,, Electrical, Computer & Systems, Engineering Dep, Troy, NY, USA, Rensselaer Polytechnic Inst, Electrical, Computer & Systems Engineering Dep, Troy, NY, USA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1986,
29
(02)
:257
-260
[3]
INFLUENCE OF GA-AS-TE INTERFACIAL PHASES ON THE ORIENTATION OF EPITAXIAL CDTE ON GAAS
[J].
FELDMAN, RD
论文数:
0
引用数:
0
h-index:
0
FELDMAN, RD
;
AUSTIN, RF
论文数:
0
引用数:
0
h-index:
0
AUSTIN, RF
;
KISKER, DW
论文数:
0
引用数:
0
h-index:
0
KISKER, DW
;
JEFFERS, KS
论文数:
0
引用数:
0
h-index:
0
JEFFERS, KS
;
BRIDENBAUGH, PM
论文数:
0
引用数:
0
h-index:
0
BRIDENBAUGH, PM
.
APPLIED PHYSICS LETTERS,
1986,
48
(03)
:248
-250
[4]
HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
[J].
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
;
BHAT, I
论文数:
0
引用数:
0
h-index:
0
BHAT, I
.
APPLIED PHYSICS LETTERS,
1984,
44
(08)
:779
-781
[5]
HAGIHARA N, 1968, HDB ORGANOMETALLIC C
[6]
METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE
[J].
HOKE, WE
论文数:
0
引用数:
0
h-index:
0
机构:
Raytheon Co, Research Div,, Lexington, MA, USA, Raytheon Co, Research Div, Lexington, MA, USA
HOKE, WE
;
LEMONIAS, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
Raytheon Co, Research Div,, Lexington, MA, USA, Raytheon Co, Research Div, Lexington, MA, USA
LEMONIAS, PJ
.
APPLIED PHYSICS LETTERS,
1985,
46
(04)
:398
-400
[7]
EPITAXIAL-GROWTH OF CDXHG1-XTE BY PHOTO-MOVPE
[J].
IRVINE, SJC
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
IRVINE, SJC
;
GIESS, J
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
GIESS, J
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
MULLIN, JB
;
BLACKMORE, GW
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
BLACKMORE, GW
;
DOSSER, OD
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
DOSSER, OD
.
MATERIALS LETTERS,
1985,
3
(7-8)
:290
-293
[8]
THE POTENTIAL FOR ABRUPT INTERFACES IN CDXHG1-XTE USING THERMAL AND PHOTO-MOVPE
[J].
IRVINE, SJC
论文数:
0
引用数:
0
h-index:
0
IRVINE, SJC
;
GIESS, J
论文数:
0
引用数:
0
h-index:
0
GIESS, J
;
GOUGH, JS
论文数:
0
引用数:
0
h-index:
0
GOUGH, JS
;
BLACKMORE, GW
论文数:
0
引用数:
0
h-index:
0
BLACKMORE, GW
;
ROYLE, A
论文数:
0
引用数:
0
h-index:
0
ROYLE, A
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
;
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:437
-451
[9]
PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE
[J].
IRVINE, SJC
论文数:
0
引用数:
0
h-index:
0
IRVINE, SJC
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
TUNNICLIFFE, J
论文数:
0
引用数:
0
h-index:
0
TUNNICLIFFE, J
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:188
-193
[10]
ANISOTROPIC PHOTODISSOCIATION OF CADMIUM DIMETHYL
[J].
JONAH, C
论文数:
0
引用数:
0
h-index:
0
JONAH, C
;
CHANDRA, P
论文数:
0
引用数:
0
h-index:
0
CHANDRA, P
;
BERSOHN, R
论文数:
0
引用数:
0
h-index:
0
BERSOHN, R
.
JOURNAL OF CHEMICAL PHYSICS,
1971,
55
(04)
:1903
-&
←
1
2
→