EPITAXIAL-GROWTH OF CDXHG1-XTE BY PHOTO-MOVPE

被引：25

作者：

IRVINE, SJC ^{[1
]}

GIESS, J ^{[1
]}

MULLIN, JB ^{[1
]}

BLACKMORE, GW ^{[1
]}

DOSSER, OD ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 7-8期

关键词：

D O I：

10.1016/0167-577X(85)90024-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：290 / 293

页数：4

共 12 条

[1] DOPING OF LPE LAYERS OF CDTE GROWN FROM TE SOLUTIONS
ASTLES, M
GORDON, N
BRADLEY, D
DEAN, PJ
WIGHT, DR
BLACKMORE, G
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 167 - 189
[2] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS
BOWERS, JE
SCHMIT, JL
SPEERSCHNEIDER, CJ
MACIOLEK, RB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 24 - 28
[3] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
GHANDHI, SK
BHAT, I
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 779 - 781
[4] LIQUIDUS ISOTHERMS, SOLIDUS LINES AND LPE GROWTH IN THE TE-RICH CORNER OF THE HG-CD-TE SYSTEM
HARMAN, TC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (06) : 945 - 961
[5] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS
HOKE, WE
TRACZEWSKI, R
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5087 - 5089
[6] A STUDY OF TRANSPORT AND PYROLYSIS IN THE GROWTH OF CDXHG1-XTE BY MOVPE
IRVINE, SJC
TUNNICLIFFE, J
MULLIN, JB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 479 - 484
[7] PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE
IRVINE, SJC
MULLIN, JB
TUNNICLIFFE, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 188 - 193
[8] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE
IRVINE, SJC
MULLIN, JB
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 107 - 115
[9] IRVINE SJC, 1984, P MRS S LASER CONTRO
[10] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS
MULLIN, JB
IRVINE, SJC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 178 - 181

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