X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF PLASMA-DEPOSITED GESEX FILMS

被引：19

作者：

CARDINAUD, C ^{[1
]}

TURBAN, G ^{[1
]}

CROS, B ^{[1
]}

RIBES, M ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,PHYSICOCHIM MAT SOLIDES LAB,CNRS,URA D0407,F-34095 MONTPELLIER 05,FRANCE

来源：

THIN SOLID FILMS | 1991年 / 205卷 / 02期

关键词：

D O I：

10.1016/0040-6090(91)90298-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin layers of plasma-deposited GeSe(x) were exposed to daylight and afterwards analysed by X-ray photoelectron spectroscopy. The presence of oxygen was detected to a depth of a few nanometres. The absence of Se-O bonds shows that oxidation of the chalcogenide takes place by the substitution of oxygen atoms for selenium atoms and not by intercalation in the network or by the replacement for selenium atoms forming terminal dimers.

引用

页码：165 / 170

页数：6

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