SHORT PULSE TRANSFER CHARACTERISTICS OF ALXGA1-XAS/GAAS AND ALXGA1-XAS/INYGA1-YAS MODULATION-DOPED HETEROJUNCTION FETS

被引：6

作者：

CHANDRA, A

GARBINSKI, PA

SHAH, NJ

KUO, JM

KOPF, RF

SMITH, PR

机构：

[1] AT…T Bell Laboratories, Murray Hill

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期

关键词：

D O I：

10.1109/55.56483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short pulse drain current versus gate voltage transfer characteristics have been measured for modulation-doped HFET's (MODFET's) with four donor-layer/channel-layer combinations-1) Alo.3Gao.7As/GaAs, 2) Alo.2Gao.8As/GaAs, 3) Alo.3Gao.7As/Ino.2-Gao.8As, and 4) Al0.2Ga0.sAs/ In0.2Ga0.sAs— and have been compared with the dc transfer characteristics. The measurements are relevant to high-speed switching in HFET circuits. Significant shifts in threshold voltage are observed between the dc and short pulse characteristics for the structures with n+-Al0.3Ga0.7As donor layers, while the corresponding shifts for structures with n−-Alo.2Gao.sAs donor layers are relatively small, or virtually nonexistent. © 1990 IEEE

引用

页码：306 / 308

页数：3

共 4 条

[1] DEEP DONOR TRAPPING EFFECTS ON THE PULSED CHARACTERISTICS OF ALGAAS GAAS HEMTS [J].