DEEP DONOR TRAPPING EFFECTS ON THE PULSED CHARACTERISTICS OF ALGAAS GAAS HEMTS

被引：8

作者：

HOFMANN, KR

KOHN, E

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 06期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - Charge Carriers;

D O I：

10.1049/el:19860230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated by experiments and numerical model calculations that electron capture/emission on deep Si related donors ('DX centres') in the AlGaAs can lead to significant changes of the pulsed transfer characteristic of AlGaAs/GaAs high electron mobility transistors (HEMTs) at room temperature compared with the static case.

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页码：335 / 337

页数：3

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