ROOM-TEMPERATURE ELECTRON TRAPPING IN AL0.35GA0.65AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：30

作者：

NATHAN, MI

MOONEY, PM

SOLOMON, PM

WRIGHT, SL

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：628 / 630

页数：3

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