THE INFLUENCE OF DONOR NEUTRALIZATION ON THE TRANSFER CHARACTERISTICS OF MODFETS AT 77-K - THEORY AND EXPERIMENT

被引:8
作者
MASSELINK, WT [1 ]
DRUMMOND, TJ [1 ]
KLEM, J [1 ]
KOPP, W [1 ]
CHANG, YC [1 ]
PONSE, F [1 ]
MORKOC, H [1 ]
机构
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1109/T-ED.1985.22004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:713 / 716
页数:4
相关论文
共 12 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   A GENERALIZED APPROXIMATION OF THE FERMI-DIRAC INTEGRALS [J].
AYMERICHHUMET, X ;
SERRAMESTRES, F ;
MILLAN, J .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2850-2851
[3]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[4]   ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES [J].
DRUMMOND, TJ ;
SU, SL ;
LYONS, WG ;
FISCHER, R ;
KOPP, W ;
MORKOC, H ;
LEE, K ;
SHUR, MS .
ELECTRONICS LETTERS, 1982, 18 (24) :1057-1058
[5]   BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J].
DRUMMOND, TJ ;
FISCHER, RJ ;
KOPP, WF ;
MORKOC, H ;
LEE, K ;
SHUR, MS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1806-1811
[6]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[7]  
DRUMMOND TJ, 1982, J CRYST GROWTH, V56, P440
[8]   HIGH-SPEED FREQUENCY-DIVIDERS USING GAAS/GAALAS HIGH-ELECTRON-MOBILITY TRANSISTORS [J].
LEE, CP ;
LEE, SJ ;
HOU, D ;
MILLER, DL ;
ANDERSON, RJ ;
SHENG, NH .
ELECTRONICS LETTERS, 1984, 20 (05) :217-219
[9]  
LEE K, 1984, IEEE T ELECTRON DEV, V31, P29
[10]   THE HEMT - A SUPERFAST TRANSISTOR [J].
MORKOC, H ;
SOLOMON, PM .
IEEE SPECTRUM, 1984, 21 (02) :28-35