METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

[31] ELECTRONS IN DISORDERED STRUCTURES [J]. ADVANCES IN PHYSICS, 1967, 16 (61) : 49 - +

[32] PANKOVE J, 1980, APPL PHYS LETT, V38, P456

[33] PHYSICAL PROCESSES IN DEGRADATION OF AMORPHOUS SI-H [J]. APPLIED PHYSICS LETTERS, 1986, 48 (13) : 846 - 848

[34] ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 327 - 330

[35] SKUMANICH A, 1985, PHYS REV B, V31, P2253

[36] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268

[37] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294

[38] STABILITY OF N-I-P AMORPHOUS-SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 733 - 735

[39] LIGHT-INDUCED-CHANGES IN A-SI-H ANALYZED BY FIELD-EFFECT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 407 - 410

[40] THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3030 - 3033

[31] ELECTRONS IN DISORDERED STRUCTURES [J]. ADVANCES IN PHYSICS, 1967, 16 (61) : 49 - +

[32] PANKOVE J, 1980, APPL PHYS LETT, V38, P456

[33] PHYSICAL PROCESSES IN DEGRADATION OF AMORPHOUS SI-H [J]. APPLIED PHYSICS LETTERS, 1986, 48 (13) : 846 - 848

[34] ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 327 - 330

[35] SKUMANICH A, 1985, PHYS REV B, V31, P2253

[36] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268

[37] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294

[38] STABILITY OF N-I-P AMORPHOUS-SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 733 - 735

[39] LIGHT-INDUCED-CHANGES IN A-SI-H ANALYZED BY FIELD-EFFECT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 407 - 410

[40] THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3030 - 3033