PROPERTIES OF GOLD CONTACTS ON CLEAN N-SILICON SURFACES

被引：1

作者：

KRENZKE, G

LEMKE, H

MULLER, GO

机构：

[1] Physikalisch‐Technisches Institut der Deutschen, Akademie der Wissenschaften zu Berlin, Abteilung Kristallelektronik

来源：

PHYSICA STATUS SOLIDI | 1968年 / 25卷 / 02期

关键词：

D O I：

10.1002/pssb.19680250251

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K131 / &

共 11 条

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].

ALLEN, FG ;

GOBELI, GW .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[3]

ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[5] ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].

CROWELL, CR ;

HOWARTH, LE ;

SPITZER, WG ;

LABATE, EE .

PHYSICAL REVIEW, 1962, 127 (06) :2006-&

[6] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[7] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[8]

KAHNG O, 1963, SOLID STATE ELECTRON, V6, P281

[9] ELEKTRONISCHE ZUSTANDE AN REINEN SILIZIUMOBERFLACHEN [J].

LAMATSCH, H .

PHYSICA STATUS SOLIDI, 1965, 9 (01) :119-&

[10] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

← 1 2 →