SILICIDE LAYER GROWTH-RATES IN MO/SI MULTILAYERS

The thermal stability of sputter-deposited Mo/Si multilayers was investigated by annealing studies at relatively low temperatures (approximately 250-350-degrees-C) for various times (0.5-3000 h). Two distinct stages of thermally activated Mo/Si interlayer growth were found: a primary surge, followed by a (slower) secondary steady-state growth in which the interdiffusion coefficient is constant. The interdiffusion coefficients for the interlayer formed by deposition of Mo-on-Si are higher than those of the interlayer formed by deposition of Si-on-Mo. Assuming that the activation energy is constant, an extrapolation of our results to ambient temperature finds that interlayer growth is negligible, suggesting long-term thermal stability in soft-x-ray projection lithography applications.