STRESS-RELAXATION IN MO/SI MULTILAYER STRUCTURES

被引：35

作者：

KOLA, RR

WINDT, DL

WASKIEWICZ, WK

WEIR, BE

HULL, R

CELLER, GK

VOLKERT, CA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The as-deposited stress in sputtered, 75-angstrom-period Mo/Si multilayers was measured to be approximately -350 MPa (compressive), and relaxed to approximately -150 MPa after thermal cycling to 200-degrees-C. The multilayer period was found to decrease by 0.25 angstrom as a result of thermal cycling, with only a slight decrease in peak soft-x-ray reflectance. The stress-temperature behavior of individual Mo and Si films was also measured, and correlated with the multilayer behavior: stress relaxation in the multilayer is attributed to viscous flow associated with defect annihilation, occurring predominantly in the amorphous Si layers.

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页码：3120 / 3122

页数：3

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