INSITU STRESS MEASUREMENT OF REFRACTORY-METAL SILICIDES DURING SINTERING

被引:95
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PAN, JT
BLECH, I
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10.1063/1.333326
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O59 [应用物理学];
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页码:2874 / 2880
页数:7
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共 8 条
[1]   TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J].
ANGILELLO, J ;
BAGLIN, JEE ;
CARDONE, F ;
DEMPSEY, JJ ;
DHEURLE, FM ;
IRENE, EA ;
MACINNES, R ;
PETERSSON, CS ;
SAVOY, R ;
SEGMULLER, AP ;
TIERNEY, E .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :59-93
[2]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293
[3]  
Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211
[4]   MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].
JACCODINE, RJ ;
SCHLEGEL, WA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+
[5]   REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].
MURARKA, SP ;
FRASER, DB ;
SINHA, AK ;
LEVINSTEIN, HJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417
[6]   REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792
[7]   ELASTIC STIFFNESS AND THERMAL-EXPANSION COEFFICIENTS OF VARIOUS REFRACTORY SILICIDES AND SILICON-NITRIDE FILMS [J].
RETAJCZYK, TF ;
SINHA, AK .
THIN SOLID FILMS, 1980, 70 (02) :241-247
[8]  
Touloukian Y.S., 1977, THERMOPHYSICAL PROPE, V13