HIGH AND LOW THERMAL NITRIDATION OF SIO2 THIN-FILMS

被引：3

作者：

BALLAND, B

BUREAU, JC

BENAMAR, A

RONDA, A

GLACHANT, A

机构：

[1] INST NATL SCI APPL LYON,THERMOCHIM MINERALE LAB,CNRS,UA 116,F-69621 VILLEURBANNE,FRANCE

[2] FAC SCI LUMINY,SURFACES & INTERFACES LAB,CNRS,UA 794,F-13288 MARSEILLE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90096-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：216 / 223

页数：8

共 8 条

[1] HIGH-TEMPERATURE THERMAL NITRIDATION AND LOW-TEMPERATURE ELECTRON-BEAM-ENHANCED NITRIDATION OF SIO2 THIN-FILMS [J].

BALLAND, B ;

GLACHANT, A ;

RONDA, A ;

DUPUY, JC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01) :187-198

[2] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON [J].

CHANG, ST ;

JOHNSON, NM ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318

[3] KINETICS OF SI(100) NITRIDATION 1ST STAGES BY AMMONIA - ELECTRON-BEAM-INDUCED THIN-FILM GROWTH AT ROOM-TEMPERATURE [J].

GLACHANT, A ;

SAIDI, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :985-991

[4] HYDROGEN CONTENT OF THERMALLY NITRIDED THIN SILICON DIOXIDE FILMS [J].

HABRAKEN, FHPM ;

EVERS, EJ ;

KUIPER, AET .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :62-64

[5] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1708-1714

[6] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

[7]

NOZAWA H, 1985, 3 S VLSI SCI TECHN T

[8]

RONDA A, 1987, APPL PHYS LETT, V26, P171

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