PHOTOREFLECTANCE MEASUREMENTS ON SI DELTA-DOPED GAAS SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

BERNUSSI, AA

IIKAWA, F

MOTISUKE, P

BASMAJI, P

LI, MS

HIPOLITO, O

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS,DEPT ESTADO SOLIDO,BR-13081 CAMPINAS,SP,BRAZIL

[2] UNIV ESTADUAL CAMPINAS,DEPT FIS APL,PESQUISA DISPOSIT LAB,BR-13081 CAMPINAS,SP,BRAZIL

[3] UNIV SAO PAULO,INST FIS & QUIM SAO CARLOS,BR-13560 SAO CARLOS,SP,BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.

引用

页码：4149 / 4151

页数：3

共 14 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].