SPATIAL LOCALIZATION AND DIFFUSION OF ATOMIC SILICON IN DELTA-DOPED GAAS

被引：23

作者：

SCHUBERT, EF

CHIU, TH

CUNNINGHAM, JE

TELL, B

STARK, JB

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

[2] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期

关键词：

D O I：

10.1007/BF02652103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：527 / 531

页数：5

共 15 条

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[3]

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[8] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J].

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[9] INTERPRETATION OF CAPACITANCE-VOLTAGE PROFILES FROM DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (07) :966-970

[10] SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT ;

TIMP, GL .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1170-1172

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