ON THE DESIGN OF COMPOSITE-COLLECTOR HBTS

被引:3
作者
GHODSIAN, B
PULFREY, DL
ABID, Z
MCALISTER, SP
机构
[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER,BC V6T 1Z4,CANADA
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA
关键词
D O I
10.1016/0038-1101(94)00263-F
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:1275 / 1278
页数:4
相关论文
共 14 条
[11]  
PEARSALL TP, 1982, GAINASP ALLOY SEMICO, P202
[12]   BISTABLE HOT-ELECTRON TRANSPORT IN INP/GAINAS COMPOSITE COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
RITTER, D ;
HAMM, RA ;
FEYGENSON, A ;
TEMKIN, H ;
PANISH, MB ;
CHANDRASEKHAR, S .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :70-72
[13]   RECIPROCITY IN HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
STDENIS, A ;
PULFREY, DL ;
MARTY, A .
SOLID-STATE ELECTRONICS, 1992, 35 (11) :1633-1637
[14]   ON THE STORAGE TIME OF INGAAS/INP BIPOLAR-TRANSISTORS [J].
SU, LM ;
MEKONNEN, G ;
GROTE, N .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :554-556