RECIPROCITY IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：3

作者：

STDENIS, A

PULFREY, DL

MARTY, A

机构：

[1] COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA

[2] CNRS,LAAS,F-31077 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 11期

关键词：

D O I：

10.1016/0038-1101(92)90190-N

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using the principle of current balancing to determine the boundary conditions for minority carriers in the base of heterojunction bipolar transistors, a general equation for the collector current is derived. This equation is then used to examine the degree to which emitter-collector current reciprocity holds for AlGaAs/GaAs single- and double-heterojunction devices. It is shown that reciprocity holds strictly in only a few instances.

引用

收藏

页码：1633 / 1637

页数：5

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