THE CUTOFF FREQUENCY OF BASE-GRADED AND JUNCTION-GRADED ALXGA1-XAS DHBTS

被引:5
作者
ANG, OS
PULFREY, DL
机构
[1] Department of Electrical Engineering, University of British Columbia, Vancouver
关键词
D O I
10.1016/0038-1101(91)90025-T
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A detailed model of AlxGa1-xAs double-heterojunction bipolar transistors is used to examine the effects on the cut-off frequency of varying both the degree of base grading in abrupt-junction devices, and the amount of base-collector junction grading in uniform-base devices. It is shown that, in the graded-base case, there is an optimum degree of base grading, stemming from the trade-off between the strength of the aiding field for minority carrier transport across the base and the height of the barrier at the base-collector junction, which inhibits charge flow to the collector. In the uniform-base case, it is shown that a small amount of base-collector junction grading is sufficient to effectively remove the blocking action of the conduction band discontinuity, and so allow the base transit time to attain its diffusion-limited value.
引用
收藏
页码:1325 / 1328
页数:4
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