MOS FIELD THRESHOLD INCREASE BY PHOSPHORUS-IMPLANTED FIELD

[1] APPELS JA, 1971, PHILIPS RES REP, V26, P157

[2] AUBUCHON KG, 1969, P INT C PROPERTIES U, P575

[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[4] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 389 - +

[5] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[6] NISHIMATSU S, 1971, J JAPAN SOC APPL P S, V40, P29

[7] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 831 - &

[1] APPELS JA, 1971, PHILIPS RES REP, V26, P157

[2] AUBUCHON KG, 1969, P INT C PROPERTIES U, P575

[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[4] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 389 - +

[5] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[6] NISHIMATSU S, 1971, J JAPAN SOC APPL P S, V40, P29

[7] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 831 - &