FIELD-RETARDED DIFFUSION OF ANTIMONY IN GERMANIUM

被引：11

作者：

FA, C

ZULEEG, R

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(61)90075-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：18 / &

共 9 条

BACKENSTOSS, G .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710

[2]

BLAKESLEE AE, 1960, MAY EL SOC M CHIC

[3] DIFFUSION OF GALLIUM IN SILICON [J].

KURTZ, AD ;

GRAVEL, CL .

[4] DIFFUSION OF BORON INTO SILICON [J].

KURTZ, AD ;

YEE, R .

[5] INTERACTION BETWEEN ARSENIC AND ALUMINUM IN GERMANIUM [J].

MCCALDIN, JO .

[6]

Rahaman M.N., 2003, ANN PHYS-BERLIN, V2nd, DOI [DOI 10.1002/ANDP.18551700105, 10.1201/9781315274126]

[7] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

REISS, H ;

FULLER, CS ;

MORIN, FJ .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636

[8] FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION [J].

SMITS, FM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1049-1061

[9] AN ANALYSIS OF DIFFUSION IN SEMICONDUCTORS [J].

ZAROMB, S .