THE SI/GAAS (110) HETEROJUNCTION - STRAIN, DISORDER, AND VALENCE-BAND DISCONTINUITY

被引：21

作者：

LIST, RS

WOICIK, JC

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1279 / 1283

页数：5

共 26 条

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